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銆�銆�鏈�澶ц几鍑洪浕娴侊細600mA
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銆�銆�宸ヤ綔婧害鑼冨湇锛�-40掳C 鑷� +85掳C
銆�銆�灏佽椤炲瀷锛歍DFN-6L (2mm x 2mm)
銆�銆�鏁堢巼锛氶珮閬� 95%
銆�銆�闈滄厠(t脿i)闆绘祦锛氬吀鍨嬪�� 30uA
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銆�銆�鍏朵富瑕佺壒榛炲寘鎷細
銆�銆�1. 鍏�(n猫i)缃珮鎬ц兘 MOSFET 鍜屼簩妤电锛屾笡灏戜簡澶栭儴鍏冧欢鏁�(sh霉)閲�锛岀啊鍖栦簡瑷▓閬庣▼銆�
銆�銆�2. 鏀寔鍥哄畾闋荤巼 PWM 妯″紡锛屽湪杓曡級鏅傝嚜鍕曢�插叆 PFM 妯″紡浠ユ彁楂樻晥鐜囥��
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閫欐鑺墖寤ｆ硾鎳夌敤浜庡悇椤炰究鏀滃紡闆诲瓙瑷倷涓�锛屼緥濡傦細
銆�銆�1. 绉诲嫊闆昏┍鍜屾櫤鑳芥墜姗熺殑闆绘簮绠＄悊銆�
銆�銆�2. 骞虫澘闆昏叇鍜屽叾浠栨墜鎸佽ō鍌欑殑渚涢浕瑙ｆ焙鏂规銆�
銆�銆�3. 鏁�(sh霉)纰肩浉姗熷強鏀濆儚姗熶腑鐨勯浕姹犱緵闆婚儴鍒嗐��
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銆�銆�5. 鐒＄窔鍌虫劅鍣ㄧ瘈(ji茅)榛炲強鍏朵粬闇�瑕侀珮鏁堥浕婧愯綁(zhu菐n)鎻涚殑灏忓瀷闆诲瓙瑁濈疆銆�
AAT2114AIHN-0.6-T1, AAT2114AIHN-1.2-T1
