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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > FDMC4435BZ

FDMC4435BZ 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2024/8/8 18:00:39 鏌ョ湅 闁辫畝锛�385

FDMC4435BZ鏄竴娆鹃噰鐢ㄩ鍏嗗崐灏�(d菐o)楂斿厛閫�(j矛n)鐨凱owerTrench?宸ヨ棟鐢熺敘(ch菐n)鐨凱婧濋亾MOSFET銆傚畠缍�(j墨ng)閬庣壒鍒ュ畾鍒讹紝鍙渶澶ч檺搴﹀湴闄嶄綆灏�(d菐o)閫氶浕闃�銆傚畠闈炲父閬╁悎渚挎敎寮忛浕姹犵祫涓父瑕嬬殑璨�(f霉)杓夊垏鎻涙噳(y墨ng)鐢�銆�

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VGS=-10 V锛孖D=-8.5 A鏅�锛屾渶澶DS锛坥n锛�=20 m惟
銆�銆�VGS=-4.5 V锛孖D=-6.3 A鏅�锛屾渶澶DS锛坥n锛�=37 m惟
銆�銆�閬╃敤浜庨浕姹犳噳(y墨ng)鐢ㄧ殑鎿�(ku貌)灞昖GSS鑼冨湇锛�-25 V锛�
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銆�銆�楂樺姛鐜囧拰闆绘祦铏曠悊鑳藉姏
銆�銆�HBM ESD淇濊(h霉)绛夌礆鍏稿瀷鍊�>7 kV锛堟敞4锛�
銆�銆�100%UIL娓│
銆�銆�绔瓙鐒￠墰锛岀鍚圧oHS妯�(bi膩o)婧�(zh菙n)

鎶�琛�(sh霉)鍙冩暩(sh霉)

閲濊叧鏁�(sh霉)锛�
銆�銆�婕忔簮妤甸浕闃伙細0.015惟
銆�銆�鑰楁暎鍔熺巼锛�31 W
銆�銆�闁惧�奸浕澹擄細1.9 V
銆�銆�婕忔簮妤甸浕澹�(Vds)锛�30 V
銆�銆�涓婂崌鏅傞枔锛�6 ns
銆�銆�杓稿叆闆诲(Ciss)锛�1540pF 15V(Vds)
銆�銆�椤嶅畾鍔熺巼(Max)锛�2.3 W
銆�銆�涓嬮檷鏅傞枔锛�20 ns
銆�銆�宸ヤ綔婧害(Max)锛�150鈩�
銆�銆�宸ヤ綔婧害(Min)锛�-55鈩�
銆�銆�鑰楁暎鍔熺巼(Max)锛�2300 mW

鐗╃悊鍙冩暩(sh霉)

鏉愯唱(zh矛)锛歋ilicon
銆�銆�宸ヤ綔婧害锛�-55鈩儈150鈩�

绗﹀悎妯�(bi膩o)婧�(zh菙n)

RoHS妯�(bi膩o)婧�(zh菙n)锛歊oHS Compliant
銆�銆�鍚墰妯�(bi膩o)婧�(zh菙n)锛歀ead Free

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鐢�(ch菐n)鍝佺敓鍛藉懆鏈燂細Active
銆�銆�鍖呰鏂瑰紡锛歍ape&Reel(TR)
銆�銆�鍒堕�犳噳(y墨ng)鐢細Power Management,Portable Devices

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  • 瑭㈠児

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  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

fdmc4435bz鍙冩暩(sh霉)

  • 妯�(bi膩o)婧�(zh菙n)鍖呰3,000
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪PowerTrench®
  • FET 鍨�MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸(di菐n)閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)30V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C8.5A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C20 姣瓙 @ 8.5A锛�10V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級3V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs46nC @ 10V
  • 杓稿叆闆诲 (Ciss) @ Vds2045pF @ 15V
  • 鍔熺巼 - 鏈�澶�2.3W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-MLP锛孭ower33
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�MLP锛�3.3x3.3锛�
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūFDMC4435BZTR