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鎮ㄥソ锛屾杩庝締(l谩i)鍒扮董搴�(k霉)闆诲瓙甯傚牬(ch菐ng)缍�(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺(c猫)

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩�(g貌u)缍�(w菐ng) > IC鐧剧 > FDN302P

FDN302P 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2023/3/2 14:09:21 鏌ョ湅 闁辫畝锛�1007

    鍒堕�犲晢锛欶airchildSemiconductor

    鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�(h脿o)

    RoHS锛氭槸

 

鐩寗

姒傝堪

    鍒堕�犲晢锛欶airchildSemiconductor

    鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�(h脿o)

    RoHS锛氭槸

    閰嶇疆锛歋ingle

    鏅堕珨绠℃サ鎬э細P-Channel

    闆婚樆姹叉サ/婧愭サRDS锛堝皫(d菐o)閫氾級锛�0.055Ohms

    姝ｅ悜璺ㄥ皫(d菐o)gFS锛堟渶澶у��/鏈�灏忓�硷級锛�10S

    姹叉サ/婧愭サ鎿婄┛闆诲锛�-20V

    闁�/婧愭搳绌块浕澹擄細+/-12V

    婕忔サ閫ｇ簩(x霉)闆绘祦锛�2.4A

    鍔熺巼鑰楁暎锛�0.5W

    鏈�澶у伐浣滄韩搴︼細+150C

    瀹夎棰�(f膿ng)鏍硷細SMD/SMT

    灏佽/绠遍珨锛歋uperSOT

    灏佽锛歊eel

    鏈�灏忓伐浣滄韩搴︼細-55C

    StandardPackQty锛�3000

    闆朵欢铏�(h脿o)鍒ュ悕锛欶DN302P_NL


璩囨枡

寤犲晢
TI

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  • 寤犲晢
  • 灏佽/鎵硅櫉(h脿o)
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fdn302p璩囨枡 鏇村>

  • 鍨嬭櫉(h脿o)
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

fdn302p鍙冩暩(sh霉)

  • 鐢�(ch菐n)鍝佸煿瑷�(x霉n)妯″High Voltage Switches for Power Processing
  • 妯�(bi膩o)婧�(zh菙n)鍖呰3,000
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪PowerTrench®
  • FET 鍨�MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸(di菐n)閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)20V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C2.4A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C55 姣瓙 @ 2.4A锛�4.5V
  • Id 鏅�(sh铆)鐨� Vgs(th)锛堟渶澶э級1.5V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs14nC @ 4.5V
  • 杓稿叆闆诲 (Ciss) @ Vds882pF @ 10V
  • 鍔熺巼 - 鏈�澶�460mW
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨TO-236-3锛孲C-59锛孲OT-23-3
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�3-SSOT
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūFDN302P-NDQ1148322