鍨嬭櫉锛欸A0805A180GXEBP31G
銆�銆�椤炲瀷锛歂-Channel MOSFET
銆�銆�鏈�澶ф紡婧愰浕澹�(Vds)锛�60V
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銆�銆�鎸佺簩(x霉)婕忔サ闆绘祦(Id)锛�180A
銆�銆�灏庨�氶浕闃�(Rds(on))锛�4.5m惟
銆�銆�绺芥煹妤甸浕鑽�(Qg)锛�120nC
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銆�銆�宸ヤ綔婧�搴﹁寖鍦嶏��-55掳C 鑷� +175掳C
銆�銆�灏佽�濆舰寮忥細TO-247-3

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GA0805A180GXEBP31G 寤ｆ硾鐢ㄤ簬浠ヤ笅闋�(l菒ng)鍩燂細
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GA0805A150GXEBP31G, IRFP2907, FDP18N60