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銆�銆�閫欐 MOSFET 灞簬 N 婧濋亾澧炲挤鍨�锛屾敮鎸佸揩閫熼枊闂滄搷浣滐紝骞惰兘澶犳壙鍙楄純楂樼殑闆诲鍜岄浕娴佽矤杓�銆傚叾灏佽褰㈠紡鐐� TO-263锛圖2PAK锛夛紝鍏峰倷鍑鸿壊鐨勬暎鐔辨�ц兘銆�
鍨嬭櫉锛欸A0805H563JXXBT31G
銆�銆�椤炲瀷锛歂婧濋亾 MOSFET
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銆�銆�Id锛堟寔绾�(x霉)婕忔サ闆绘祦锛夛細80A
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銆�銆�Qg锛堢附鏌垫サ闆昏嵎锛夛細75nC
銆�銆�EAS锛堥洩宕╄兘閲忥級锛�1.2J
銆�銆�灏佽锛歍O-263 (D2PAK)
GA0805H563JXXBT31G 鍏锋湁浠ヤ笅涓昏鐗规�э細
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GA0805H563JXXBT31G 寤ｆ硾鎳夌敤浜庝互涓嬮牁鍩燂細
銆�銆�1. 闁嬮棞闆绘簮锛圫MPS锛夊拰 DC-DC 杞�(zhu菐n)鎻涘櫒銆�
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IRFZ44N, FDP55N06L, STP80NF06
