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椤炲瀷锛歂婧濋亾澧炲挤鍨婱OSFET
銆�銆�鏈�澶ф紡婧愰浕澹擄紙Vds锛夛細60V
銆�銆�鏈�澶ф煹婧愰浕澹擄紙Vgs锛夛細卤20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛圛d锛夛細140A
銆�銆�灏庨�氶浕闃伙紙Rds(on)锛夛細1.8m惟
銆�銆�绺芥煹妤甸浕鑽凤紙Qg锛夛細75nC
銆�銆�杓稿叆闆诲锛圕iss锛夛細4390pF
銆�銆�杓稿嚭闆诲锛圕oss锛夛細930pF
銆�銆�鍙嶅悜鍌宠几闆诲锛圕rss锛夛細125pF
銆�銆�鍔熻�楋紙Ptot锛夛細175W
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55掳C 鑷� +175掳C
GA1206A1R8DBABT31G 鍏锋湁浠ヤ笅椤憲鐗规�э細
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GA1206A1R8DBABT31G 寤ｆ硾鎳夌敤浜庝互涓嬮牁鍩燂細
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銆�銆�3. DC-DC 杞夋彌鍣ㄥ拰闄嶅/鍗囧杞夋彌鍣ㄧ殑鏍稿績鍔熺巼鍏冧欢銆�
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銆�銆�7. 鍚勯闇�瑕佸ぇ闆绘祦銆侀珮鏁堢巼鍜岄珮闋诲伐浣滅殑闆诲姏闆诲瓙瑁濈疆銆�
GA1206A1R8DBABT30G, IRFP2907ZPBF, FDP150N06LE
