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GA1206A1R8DXABC31G 鏄竴娆鹃珮鎬ц兘鐨勫姛鐜� MOSFET 鑺墖锛屽唬娉涙噳鐢ㄤ簬闁嬮棞闆绘簮銆侀浕姗熼﹨鍕曞拰璨犺級闁嬮棞绛夐牁鍩熴�傝┎鑺墖閲囩敤浜嗗厛閫茬殑婧濇Ы寮� MOSFET 鎶�琛�锛屽叿鍌欎綆灏庨�氶浕闃诲拰楂樻晥鐜囩殑鐗归粸锛岃兘澶犻’钁楅檷浣庤兘閲忔悕鑰楀苟鎻愬崌绯荤当(t菕ng)鎬ц兘銆�
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鍨嬭櫉锛欸A1206A1R8DXABC31G
銆�銆�椤炲瀷锛歂-Channel MOSFET
銆�銆�Vds锛堟紡婧愭サ闆诲锛夛細60V
銆�銆�Rds(on)锛堝皫閫氶浕闃伙級锛�1.8m惟
銆�銆�Id锛堥�ｇ簩(x霉)婕忔サ闆绘祦锛夛細120A
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銆�銆�Fmax锛堟渶澶у伐浣滈牷鐜囷級锛�1MHz
銆�銆�灏佽褰㈠紡锛歍O-247-3L
GA1206A1R8DXABC31G 鐨勪富瑕佺壒鎬у寘鎷互涓嬪咕榛烇細
銆�銆�1. 妤典綆鐨勫皫閫氶浕闃� (Rds(on))锛屽彲鏈夋晥娓涘皯灏庨�氭悕鑰�锛屾彁楂樼郴绲�(t菕ng)鐨勬暣楂旀晥鐜�銆�
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銆�銆�3. 鏀寔楂橀仈 1 MHz 鐨勯枊闂滈牷鐜囷紝閬╁悎楂橀牷闁嬮棞鎳夌敤銆�
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瑭茶姱鐗囦富瑕佹噳鐢ㄤ簬浠ヤ笅闋樺煙锛�
銆�銆�1. 闁嬮棞闆绘簮锛圫MPS锛変腑鐨勪富闁嬮棞绠℃垨鍚屾鏁存祦绠�銆�
銆�銆�2. 闆绘椹呭嫊鍣ㄤ腑鐨勫姛鐜囩礆鎺у埗锛屽鐩存祦鐒″埛闆绘椹呭嫊銆�
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銆�銆�5. 宸ユキ(y猫)鑷嫊鍖栬ō鍌欎腑鐨勫姛鐜囨帶鍒跺柈鍏冦��
銆�銆�6. 姹借粖闆诲瓙涓殑鍚勯鍔熺巼绠＄悊妯″銆�
GA1206A1R8DXABC31H, IRF1206Z, FDP120AN6S
