鍨嬭櫉(h脿o)锛欸A1206A682FXABR31G
銆�銆�鍝佺墝锛欸eneSiC Semiconductor
銆�銆�椤炲瀷锛氶浕婧愮�＄悊鑺�鐗�
銆�銆�杓稿叆闆诲�撹寖鍦嶏��2.5V - 5.5V
銆�銆�杓稿嚭闆诲�擄��1.2V
銆�銆�鏈�澶ц几鍑洪浕娴侊細6A
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銆�銆�灏佽�濆舰寮忥細QFN-16 (4x4mm)
銆�銆�鏁堢巼锛氶珮閬�(d谩)95%
銆�銆�闈滄厠(t脿i)闆绘祦锛氬吀鍨嬪�肩偤20uA

GA1206A682FXABR31G 鍏锋湁浠ヤ笅椤�钁楃壒榛�(di菐n)锛�
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GA1206A682FXABR31G 寤ｆ硾鎳�(y墨ng)鐢ㄤ簬浠ヤ笅闋�(l菒ng)鍩燂細
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GA1206A682FXABR21G
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