椤炲瀷锛歂-Channel MOSFET
銆�銆�鏈�澶ф紡婧愰浕澹�(Vdss)锛�60V
銆�銆�鏈�澶ф煹婧愰浕澹�(Vgs)锛毬�20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(Id)锛�31A
銆�銆�灏庨�氶浕闃�(Rds(on))锛�2.2m惟
銆�銆�鏌垫サ闆昏嵎(Qg)锛�75nC
銆�銆�绺界啽闃�(绲�(ji茅)鍒版��)锛�0.9掳C/W
銆�銆�宸ヤ綔婧�搴﹁寖鍦嶏��-55掳C 鑷� 175掳C

GA1206Y822JXBBR31G 鍏锋湁浠ヤ笅闂�(gu膩n)閸电壒鎬э細
銆�銆�1. 妤典綆鐨勫皫閫氶浕闃� (2.2m惟)锛岃兘澶犻’钁楅檷浣庡偝灏庢悕鑰�锛屾彁楂樼郴绲�(t菕ng)鏁堢巼銆�
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銆�銆�閫欎簺鐗规�т娇寰� GA1206Y822JXBBR31G 鎴愮偤楂樻晥鐜囥�侀珮鍙�闈犳�х殑鍔熺巼杞�(zhu菐n)鎻涙噳(y墨ng)鐢ㄧ殑鐞嗘兂閬告搰銆�

GA1206Y822JXBBR31G 寤ｆ硾鎳�(y墨ng)鐢ㄤ簬浠ヤ笅闋�(l菒ng)鍩燂細
銆�銆�1. 闁嬮棞(gu膩n)闆绘簮 (SMPS) 鍜� DC-DC 杞�(zhu菐n)鎻涘櫒銆�
銆�銆�2. 闆绘�熼��(q奴)鍕曞拰閫嗚畩鍣�銆�
銆�銆�3. 闆绘睜绠＄悊鍙婁繚璀风郴绲�(t菕ng)銆�
銆�銆�4. 娑堣不椤為浕瀛愮敘(ch菐n)鍝佷腑鐨勮矤杓夊垏鎻�銆�
銆�銆�5. 宸ユキ(y猫)瑷�(sh猫)鍌欎腑鐨勫姛鐜囨帶鍒舵ā濉�銆�
銆�銆�鍏跺崜瓒婄殑鎬ц兘鍜屽彲闈犳�т娇鍏舵垚鐐鸿ū澶氱従(xi脿n)浠ｉ浕瀛愯ō(sh猫)鍌欑殑鏍稿績鍏冧欢涔嬩竴銆�

GA1206Y822JXBBR30G, IRF3205, FDP55N06L