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椤炲瀷锛歁OSFET
銆�銆�灏佽锛歍O-263
銆�銆�婕忔簮妤甸浕澹�(Vds)锛�12V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(Id)锛�100A
銆�銆�灏�(d菐o)閫氶浕闃�(Rds(on))锛�1.8m惟
銆�銆�鏌垫サ闆昏嵎(Qg)锛�45nC
銆�銆�绺藉姛鑰�(Ptot)锛�150W
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55掳C 鑷� +175掳C
GA1210A182KBBAR31G 鐨勪富瑕佺壒鎬у寘鎷細
銆�銆�1. 妤典綆鐨勫皫(d菐o)閫氶浕闃�锛屾湁鏁堟笡灏戝姛鐜囨悕鑰椼��
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瑭茶姱鐗囧唬娉涙噳(y墨ng)鐢ㄤ簬浠ヤ笅闋�(l菒ng)鍩燂細
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銆�銆�鐢变簬鍏跺崜瓒婄殑鎬ц兘锛岄�欐 MOSFET 鍦ㄧ従(xi脿n)浠ｉ浕瀛愯ō(sh猫)瑷堜腑鍌欏彈闈掔潪銆�
GA1210A185KBBAR31G, IRF1404, FDP16N12
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