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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > GB02SLT12-220

GB02SLT12-220 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2023/3/3 15:00:09 鏌ョ湅 闁辫畝锛�339

    鍒堕�犲晢锛欸eneSiCSemiconductor

    RoHS锛氭槸

   

鐩寗

姒傝堪

    鍒堕�犲晢锛欸eneSiCSemiconductor

    RoHS锛氭槸

    鐢�(ch菐n)鍝侊細SchottkySiliconCarbideDiodes

    灏佽锛欱ulk


璩囨枡

寤犲晢
GeneSiC Semiconductor

gb02slt12-220鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

  • 鐢�(ch菐n)鍝佸瀷铏�
  • 渚涙噳(y墨ng)鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児(ji脿)

gb02slt12-220璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

gb02slt12-220鍙冩暩(sh霉)

  • 鍒堕�犲晢GeneSiC Semiconductor
  • 鐢�(ch菐n)鍝�Schottky Silicon Carbide Diodes
  • 宄板�煎弽鍚戦浕澹�1200 V
  • 姝ｅ悜閫ｇ簩(x霉)闆绘祦2 A
  • 鏈�澶ф氮娑岄浕娴�18 A
  • 鎭㈠京(f霉)鏅�(sh铆)闁�17 ns
  • 姝ｅ悜闆诲涓嬮檷1.8 V
  • 鏈�澶у弽鍚戞紡娉勯浕娴�8 uA
  • 鏈�澶у姛鐜囪�楁暎42 W
  • 宸ヤ綔婧害鑼冨湇- 55 C to + 175 C
  • 瀹夎棰�(f膿ng)鏍�Through Hole
  • 灏佽 / 绠遍珨TO-220
  • 灏佽Bulk
  • 鏈�澶т簩妤电闆诲16 pF
  • 宸ュ粻鍖呰鏁�(sh霉)閲�50