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IPD25DP06NM 鏄竴娆惧熀浜庣鍩虹殑 N 婧濋亾澧炲挤鍨嬪姛鐜� MOSFET銆傝┎鍣ㄤ欢鍏锋湁浣庡皫(d菐o)閫氶浕闃�銆佸揩閫熼枊闂�(gu膩n)閫熷害鍜岄珮鏁堢巼绛夌壒鎬�锛岄仼鐢ㄤ簬澶氱ó闆绘簮绠＄悊鎳�(y墨ng)鐢�銆傚叾灏佽褰㈠紡閫氬父鐐鸿妤�(y猫)妯欐簴鐨勫皬鍨嬭〃闈㈣布瑁濆櫒浠� (SMD)锛岄仼鍚堥珮瀵嗗害闆昏矾瑷�(sh猫)瑷�銆傞€欑ó鍔熺巼 MOSFET 鐨勫吀鍨嬫噳(y墨ng)鐢ㄥ牬鏅寘鎷� DC-DC 杞�(zhu菐n)鎻涘櫒銆佽矤杓夐枊闂�(gu膩n)銆侀浕姗熼﹨(q奴)鍕曚互鍙婇浕姹犱繚璀烽浕璺瓑銆�
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鏈€澶ф紡婧愰浕澹擄細60V
銆€銆€閫ｇ簩(x霉)婕忔サ闆绘祦锛�25A
銆€銆€灏�(d菐o)閫氶浕闃伙細4.5m惟锛堝吀鍨嬪€硷紝鍦� Vgs=10V 鏅傦級
銆€銆€鏌垫サ闆昏嵎锛�75nC锛堝吀鍨嬪€硷級
銆€銆€鍙嶅悜鎭㈠京(f霉)鏅傞枔锛�30ns锛堝吀鍨嬪€硷級
銆€銆€宸ヤ綔婧害鑼冨湇锛�-55鈩� 鑷� +175鈩�
銆€銆€灏佽褰㈠紡锛歍O-263 (DPAK)

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IPD25DP06NM 鍏峰倷浠ヤ笅闂�(gu膩n)閸电壒鎬э細
銆€銆€1. 妤典綆鐨勫皫(d菐o)閫氶浕闃�锛岃兘澶犻’钁楅檷浣庡偝灏�(d菐o)鎼嶈€楀苟鎻愰珮绯荤当(t菕ng)鏁堢巼銆�
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