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闁辫畝锛�29
IPT60S190D1 鏄� Infineon锛堣嫳椋涘噷锛夋帹鍑虹殑涓�娆惧厛閫茬殑鍔熺巼 MOSFET锛屽爆浜� OptiMOS 绯诲垪銆傝┎鍣ㄤ欢閲囩敤 TOLL 灏佽锛岄仼鐢ㄤ簬楂樻晥鐜囧拰楂樺姛鐜囧瘑搴︾殑鎳夌敤鍫存櫙銆侷PT60S190D1 浠ュ叾浣庡皫閫氶浕闃�銆佸揩閫熼枊闂滈�熷害浠ュ強鍑鸿壊鐨勭啽鎬ц兘钁楃ū锛屽唬娉涙噳鐢ㄤ簬宸ユキ(y猫)銆佹苯杌婂拰鍙啀鐢熻兘婧愰牁鍩�銆�
銆�銆�閫欐 MOSFET 鐨勮ō瑷堥噸榛炲湪浜庨檷浣庡姛鑰楀拰鎻愬崌绯荤当(t菕ng)鏁堢巼锛岀壒鍒ラ仼鍚堣姹傞珮鎬ц兘鍜岄珮鍙潬鎬х殑鍫村悎銆傚叾椤嶅畾闆诲鐐� 190V锛岃兘澶犳壙鍙楄純楂樼殑鐬厠(t脿i)闆诲锛屽悓鏅傚叿鍌欒純浣庣殑鏌垫サ闆昏嵎鍜岃几鍑洪浕鑽�锛屾湁鍔╀簬娓涘皯闁嬮棞鎼嶈�椼��
椤炲瀷锛歂-Channel MOSFET
銆�銆�鏈�澶ф紡婧愰浕澹擄細190 V
銆�銆�鏈�澶ч�ｇ簩(x霉)婕忛浕娴侊細60 A
銆�銆�灏庨�氶浕闃伙紙鍏稿瀷鍊�锛�25掳C锛夛細1.4 m惟
銆�銆�鏌垫サ闆昏嵎锛堝吀鍨嬪�硷級锛�85 nC
銆�銆�绺介枊闂滆兘閲忥紙鍏稿瀷鍊硷級锛�37 nJ
銆�銆�灏佽椤炲瀷锛歍OLL
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55 掳C 鑷� +175 掳C
IPT60S190D1 鍏峰倷浠ヤ笅椤憲鐗规�э細
銆�銆�1. 妤典綆鐨勫皫閫氶浕闃�锛岀⒑淇濋珮鏁堢殑闆绘祦鍌宠几骞堕檷浣庡偝灏庢悕鑰�銆�
銆�銆�2. 蹇�熼枊闂滆兘鍔�锛屼娇寰楀畠闈炲父閬╁悎楂橀牷鎳夌敤锛屼緥濡� DC-DC 杞夋彌鍣ㄥ拰闆绘椹呭嫊銆�
銆�銆�3. 楂樻晥鏁ｇ啽瑷▓锛屾敮鎸佹洿楂樼殑鍔熺巼瀵嗗害鍜屾洿绶婃箠鐨勮ō瑷�銆�
銆�銆�4. 鍑鸿壊鐨勯洩宕╄兘鍔涘拰鎶楅潨闆昏兘鍔�锛屽寮蜂簡鍣ㄤ欢鐨勯妫掓�у拰鍙潬鎬�銆�
銆�銆�5. 绗﹀悎 RoHS 妯欐簴锛岀挵(hu谩n)淇濅笖閬╁悎澶氱ó鎳夌敤鍫存櫙銆�
銆�銆�姝ゅ锛孴OLL 灏佽鎻愪緵鍗撹秺鐨勭啽鎬ц兘鍜岄浕姘ｆ�ц兘锛岄�蹭竴姝ユ彁鍗囦簡鏁撮珨绯荤当(t菕ng)鐨勭┅(w臎n)瀹氭��銆�
IPT60S190D1 寤ｆ硾鎳夌敤浜庝互涓嬮牁鍩燂細
銆�銆�1. 宸ユキ(y猫)瑷倷涓殑 DC-DC 杞夋彌鍣ㄥ拰 PFC锛堝姛鐜囧洜鏁�(sh霉)鏍℃锛夐浕璺�銆�
銆�銆�2. 姹借粖闆诲瓙绯荤当(t菕ng)锛屽闆诲嫊鍔╁姏杞夊悜銆佸埗鍕曠郴绲�(t菕ng)鍜岀┖瑾垮绺銆�
銆�銆�3. 澶櫧鑳介�嗚畩鍣ㄥ拰鍏朵粬鍙啀鐢熻兘婧愯綁鎻涜缃�銆�
銆�銆�4. 闆绘椹呭嫊鍣ㄥ拰浼烘湇鎺у埗绯荤当(t菕ng)銆�
銆�銆�5. 闁嬮棞闆绘簮鍜屼笉闁撴柗闆绘簮锛圲PS锛夈��
銆�銆�鐢变簬鍏跺嚭鑹茬殑鎬ц兘鍜屽彲闈犳��锛孖PT60S190D1 鎴愮偤鐪惧楂樺姛鐜囨噳鐢ㄧ殑鐞嗘兂閬告搰銆�
IPT60R080CE, IPT60R100CE, IPT60R120CE
