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鍨嬭櫉锛歀MUN5113DW1T1G
銆�銆�椤炲瀷锛氬寮峰瀷 GaN FET
銆�銆�鏈�澶ф紡婧愰浕澹擄細650 V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�2.6 A
銆�銆�灏�(d菐o)閫氶浕闃伙紙鍏稿瀷鍊硷級锛�160 m惟
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銆�銆�杓稿叆闆诲锛圕iss锛夛細950 pF
銆�銆�杓稿嚭闆诲锛圕oss锛夛細75 pF
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銆�銆�宸ヤ綔婧害鑼冨湇锛�-55掳C 鑷� +150掳C
銆�銆�灏佽锛歈FN-8
LMUN5113DW1T1G 鎻愪緵浜嗗嚭鑹茬殑闁嬮棞(gu膩n)鎬ц兘鍜屾晥鐜囪〃鐝�(xi脿n)锛屼富瑕佺壒鎬у寘鎷細
銆�銆�1. 楂樻晥鐨勬爱鍖栭幍鎶�琛�(sh霉)锛屾敮鎸侀珮闋绘搷浣滃拰鏇村皬鐨勭劇婧愬厓浠惰ō(sh猫)瑷�銆�
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LMUN5113DW1T1G 涓昏鎳�(y墨ng)鐢ㄤ簬闇�瑕侀珮鏁堢巼鍜岄珮闋诲伐浣滅殑鍫存櫙锛屽叿楂旀噳(y墨ng)鐢ㄥ寘鎷細
銆�銆�1. 闁嬮棞(gu膩n)闆绘簮锛圫MPS锛�锛屽 AC/DC 鍜� DC/DC 杞�(zhu菐n)鎻涘櫒銆�
銆�銆�2. 娑堣不闆诲瓙瑷�(sh猫)鍌欎腑鐨勫厖闆诲櫒鍜岄仼閰嶅櫒銆�
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LMG3411R030 NexFET GaN 鍔熺巼绱�銆乀PS25982D
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