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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > NDC632P_F095

NDC632P_F095 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2023/11/6 17:42:06 鏌ョ湅 闁辫畝锛�277

鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�

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鍒堕�犲晢锛欶airchildSemiconductor
鐢�(ch菐n)鍝佺ó椤烇細MOSFET灏忎俊铏�
RoHS锛氭槸
閰嶇疆锛歋ingleTripleDrainDualSource
鏅堕珨绠℃サ鎬э細P-Channel
姹叉サ/婧愭サ鎿婄┛闆诲锛�20V
闁�/婧愭搳绌块浕澹擄細-8V
婕忔サ閫ｇ簩(x霉)闆绘祦锛�2.7A
鍔熺巼鑰楁暎锛�1600mW
鏈�澶у伐浣滄韩搴︼細+150鈩�

瀹夎棰ㄦ牸锛歋MD/SMT
灏佽/绠遍珨锛歋uperSOT-6
灏佽锛歊eel
鏈�灏忓伐浣滄韩搴︼細-55鈩�

ndc632p_f095鍙冩暩(sh霉)

  • 鍒堕�犲晢Fairchild Semiconductor
  • 鐢�(ch菐n)鍝佺ó椤�MOSFET
  • 鏅堕珨绠℃サ鎬�P-Channel
  • 姹叉サ/婧愭サ鎿婄┛闆诲20 V
  • 闁�/婧愭搳绌块浕澹�- 8 V
  • 婕忔サ閫ｇ簩(x霉)闆绘祦2.7 A
  • 閰嶇疆Single Triple Drain Dual Source
  • 鏈�澶у伐浣滄韩搴�+ 150 C
  • 瀹夎棰ㄦ牸SMD/SMT
  • 灏佽 / 绠遍珨SuperSOT-6
  • 灏佽Reel
  • 涓嬮檷鏅傞枔40 ns
  • 鏈�灏忓伐浣滄韩搴�- 55 C
  • 鍔熺巼鑰楁暎1600 mW
  • 涓婂崌鏅傞枔40 ns
  • 宸ュ粻鍖呰鏁�(sh霉)閲�3000
  • 鍏稿瀷闂�(gu膩n)闁夊欢閬叉檪闁�25 ns