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NTR3C21NZT1G 鏄竴娆剧敱 ON Semiconductor锛堝畨妫編鍗婂皫(d菐o)楂旓級鍒堕€犵殑 N 婧濋亾澧炲挤(qi谩ng)鍨� MOSFET銆傝┎鍣ㄤ欢閲囩敤鍏堥€�(j矛n)鐨勬簼妲藉紡宸ヨ棟鍒堕€狅紝鍏锋湁浣庡皫(d菐o)閫氶浕闃诲拰楂橀枊闂�(gu膩n)閫熷害鐨勭壒榛�(di菐n)锛岄仼鐢ㄤ簬闇€瑕侀珮鏁堝姛鐜囪綁(zhu菐n)鎻涚殑鎳�(y墨ng)鐢ㄥ牬(ch菐ng)鏅�銆傚叾灏佽褰㈠紡鐐� LFPAK56E锛圖2PAK 灏佽锛�锛岄仼鍚堣〃闈㈣布瑁濇妧琛�(sh霉)锛圫MT锛�銆傝┎ MOSFET 寤ｆ硾鐢ㄤ簬闆绘簮绠＄悊銆侀浕姗�(j墨)椹�(q奴)鍕�(d貌ng)銆丏C-DC 杞�(zhu菐n)鎻涘櫒浠ュ強鍏朵粬闇€瑕侀珮鎬ц兘鍔熺巼闁嬮棞(gu膩n)鐨勬噳(y墨ng)鐢ㄣ€�
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鍨嬭櫉(h脿o)锛歂TR3C21NZT1G
銆€銆€鍒堕€犲晢锛歄N Semiconductor
銆€銆€椤炲瀷锛歂婧濋亾澧炲挤(qi谩ng)鍨� MOSFET
銆€銆€Vds锛堟紡婧愭サ闆诲锛夛細30V
銆€銆€Rds(on)锛堝皫(d菐o)閫氶浕闃�锛屽吀鍨嬪€硷級锛�1.4m惟
銆€銆€Id锛堥€ｇ簩(x霉)婕忔サ闆绘祦锛夛細210A
銆€銆€Vgs(th)锛堟煹妤甸柧鍊奸浕澹擄級锛�2.2V~4V
銆€銆€Qg锛堢附鏌垫サ闆昏嵎锛夛細78nC
銆€銆€EAS锛堥洩宕╄兘閲忥級锛�9.9mJ
銆€銆€灏佽锛歀FPAK56E
銆€銆€宸ヤ綔婧害鑼冨湇锛�-55掳C 鑷� +175掳C

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銆€銆€1. 闁嬮棞(gu膩n)闆绘簮锛圫MPS锛変腑鐨勫姛鐜囬枊闂�(gu膩n)鍏冧欢銆�
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