S-80730AN-DT-T1 鏅傞枔锛�2025/6/10 10:34:30 闁辫畝锛�5

S-80730AN-DT-T1 鏄竴娆鹃珮鎬ц兘鐨� MOSFET锛堥噾灞哀鍖栫墿鍗婂皫(d菐o)楂斿牬鏁堟噳(y墨ng)鏅堕珨绠★級鑺墖锛屼富瑕佺敤浜庡姛鐜囪綁(zhu菐n)鎻涘拰闁嬮棞(gu膩n)鎳�(y墨ng)鐢ㄣ€傝┎鑺墖灞簬 N 婧濋亾澧炲挤(qi谩ng)鍨� MOSFET 椤炲瀷锛屽叿鏈変綆灏�(d菐o)閫氶浕闃�銆侀珮闆绘祦鎵胯級鑳藉姏鍜屽揩閫熼枊闂�(gu膩n)閫熷害绛夌壒榛�(di菐n)銆傚叾灏佽褰㈠紡鐐� TO-252(DPAK)锛岄仼鐢ㄤ簬绶婃箠鍨嬭ō(sh猫)瑷�(j矛)鍜岃〃闈㈣布瑁濆伐钘�銆�
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鍙冩暩(sh霉)

鍨嬭櫉锛歋-80730AN-DT-T1
銆€銆€椤炲瀷锛歂婧濋亾澧炲挤(qi谩ng)鍨婱OSFET
銆€銆€Vds锛堟紡婧愭サ闆诲锛夛細60V
銆€銆€Rds(on)锛堝皫(d菐o)閫氶浕闃伙紝鍏稿瀷鍊硷級锛�4.5m惟
銆€銆€Id锛堥€ｇ簩(x霉)婕忔サ闆绘祦锛夛細80A
銆€銆€Vgs(th)锛堟煹妤甸枊鍟熼浕澹擄級锛�2.1V ~ 4.0V
銆€銆€f锛堝伐浣滈牷鐜囷級锛氭渶楂樻敮鎸佽嚦 500kHz
銆€銆€灏佽褰㈠紡锛歍O-252 (DPAK)
銆€銆€宸ヤ綔婧害鑼冨湇锛�-55掳C 鑷� +175掳C

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S-80730AN-DT-T1 鍏锋湁浠ヤ笅涓昏鐗规€э細
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S-80730AN-DT-T1 鍙唬娉涙噳(y墨ng)鐢ㄤ簬浠ヤ笅闋�(l菒ng)鍩燂細
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