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鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫 > IC鐧剧 > SI2308BDS-T1-GE3

SI2308BDS-T1-GE3 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2025/4/29 11:23:47 鏌ョ湅 闁辫畝锛�25

SI2308BDS-T1-GE3鏄疺ishay鍏徃鐢熺敘鐨勪竴娆綨婧濋亾澧炲挤鍨婱OSFET锛堥噾灞哀鍖栫墿鍗婂皫楂斿牬鏁堟噳鏅堕珨绠★級銆傝┎鍣ㄤ欢閲囩敤浜員renchFET? Gen III鎶�琛擄紝鏃ㄥ湪鎻愪緵浣庡皫閫氶浕闃诲拰楂樻晥鐜囨�ц兘銆傞�欑óMOSFET閫氬父鐢ㄤ簬闆绘簮绠＄悊銆侀浕姗熼﹨鍕曚互鍙婇枊闂滄ā寮忛浕婧愮瓑鎳夌敤闋樺煙銆�
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鍙冩暩

鏈�澶ф紡婧愰浕澹擄細30V
銆�銆�鏈�澶ф煹婧愰浕澹擄細卤8V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�3.5A
銆�銆�灏庨�氶浕闃伙紙Rds(on)锛夛細75m惟锛堝吀鍨嬪��锛孷gs=4.5V鏅傦級
銆�銆�鏌垫サ闆昏嵎锛�3.8nC锛堝吀鍨嬪�硷級
銆�銆�绺介浕瀹癸紙Ciss锛夛細165pF锛堝吀鍨嬪�硷級
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55掳C鑷�+150掳C
銆�銆�灏佽锛歋OT-23

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鏇夸唬鍨嬭櫉

SI2306DS, SI2309DS, BSS138

si2308bds-t1-ge3鎺ㄨ枽渚涙噳鍟� 鏇村>

  • 鐢㈠搧鍨嬭櫉
  • 渚涙噳鍟�
  • 鏁搁噺
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

si2308bds-t1-ge3璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

si2308bds-t1-ge3鍙冩暩

  • 妯欐簴鍖呰3,000
  • 椤炲垾鍒嗛洟寮忓崐灏庨珨鐢㈠搧
  • 瀹跺涵FET - 鍠�
  • 绯诲垪TrenchFET®
  • FET 鍨�MOSFET N 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)60V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C2.3A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C156 姣瓙 @ 1.9A锛�10V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級3V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs6.8nC @ 10V
  • 杓稿叆闆诲 (Ciss) @ Vds190pF @ 30V
  • 鍔熺巼 - 鏈�澶�1.66W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨TO-236-3锛孲C-59锛孲OT-23-3
  • 渚涙噳鍟嗚ō鍌欏皝瑁�SOT-23-3锛圱O-236锛�
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūSI2308BDS-T1-GE3TR