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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > SI2311DS-T1-GE3

SI2311DS-T1-GE3 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2025/6/5 12:29:43 鏌ョ湅 闁辫畝锛�13

SI2311DS-T1-GE3 鏄竴娆剧敱 Vishay 鍏徃鐢熺敘(ch菐n)鐨� N 婧濋亾澧炲挤鍨嬪姛鐜� MOSFET銆傝┎鍣ㄤ欢閲囩敤 TrenchFET Gen III 鎶�琛擄紝鍏锋湁杓冧綆鐨勫皫閫氶浕闃诲拰鍑鸿壊鐨勯枊闂滄�ц兘锛岄仼鐢ㄤ簬鍚勭ó楂樻晥鑳藉姛鐜囪綁鎻涙噳鐢�銆傚畠鏀寔楂橀牷鐜囨搷浣�锛屽苟涓旇兘澶犲湪杓冨鐨勯浕澹撹寖鍦嶅収(n猫i)宸ヤ綔銆�
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鍙冩暩(sh霉)

鏈�澶ф紡婧愰浕澹擄細60V
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銆�銆�灏庨�氶浕闃伙紙鍏稿瀷鍊硷級锛�7.5m惟
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銆�銆�宸ヤ綔婧害鑼冨湇锛�-55鈩� 鑷� +175鈩�

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鎳夌敤

SI2311DS-T1-GE3 寤ｆ硾鎳夌敤浜庢秷璨婚浕瀛�銆侀�氫俊瑷倷浠ュ強宸ユキ(y猫)鎺у埗闋樺煙銆傚父瑕嬬殑鎳夌敤鍫存櫙鍖呮嫭 DC-DC 杞夋彌鍣�銆佽矤杓夐枊闂溿�侀浕姗熼﹨鍕�銆侀浕姹犵鐞嗕互鍙� LED 椹呭嫊绛夈��
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鏇夸唬鍨嬭櫉

SI2308DS-T1-E3, SI2310DS-T1-E3, SI2309DS-T1-E3

si2311ds-t1-ge3鎺ㄨ枽渚涙噳鍟� 鏇村>

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  • 渚涙噳鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

si2311ds-t1-ge3鍙冩暩(sh霉)

  • 妯欐簴鍖呰3,000
  • 椤炲垾鍒嗛洟寮忓崐灏庨珨鐢�(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪TrenchFET®
  • FET 鍨�MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)8V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C3A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C45 姣瓙 @ 3.5A锛�4.5V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級800mV @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs12nC @ 4.5V
  • 杓稿叆闆诲 (Ciss) @ Vds970pF @ 4V
  • 鍔熺巼 - 鏈�澶�710mW
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨TO-236-3锛孲C-59锛孲OT-23-3
  • 渚涙噳鍟嗚ō鍌欏皝瑁�SOT-23-3
  • 鍖呰甯跺嵎 (TR)