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鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > SI3407DV-T1-GE3

SI3407DV-T1-GE3 鐧�(f膩)甯冩檪(sh铆)闁� 鏅�(sh铆)闁擄細2025/5/21 22:02:55 鏌ョ湅 闁辫畝锛�17

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鍙冩暩(sh霉)

鍨嬭櫉(h脿o)锛歋I3407DV-T1-GE3
銆�銆�椤炲瀷锛歂 婧濋亾 MOSFET
銆�銆�Vds锛堟紡婧愭サ闆诲锛夛細30V
銆�銆�Rds(on)锛堝皫(d菐o)閫氶浕闃伙級锛�1.8m惟锛堝吀鍨嬪��锛孷gs=10V锛�
銆�銆�Id锛堥�ｇ簩(x霉)婕忔サ闆绘祦锛夛細62A
銆�銆�Qg锛堟煹妤甸浕鑽凤級锛�9nC
銆�銆�EAS锛堥洩宕╄兘閲忥級锛�245mJ
銆�銆�灏佽锛歍O-263-3
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55掳C 鑷� +175掳C

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閫欐 MOSFET 寤ｆ硾鎳�(y墨ng)鐢ㄤ簬 DC/DC 杞�(zhu菐n)鎻涘櫒銆佸悓姝ユ暣娴�銆佽矤(f霉)杓夐枊闂�(gu膩n)銆侀浕姗�(j墨)椹�(q奴)鍕�(d貌ng)浠ュ強闆绘睜淇濊(h霉)绛夊牬(ch菐ng)鍚堛��
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鏇夸唬鍨嬭櫉(h脿o)

SI3406DS-T1-E3
銆�銆�IRLR7843PbF
銆�銆�FDP16N30L

si3407dv-t1-ge3鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

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  • 寤犲晢
  • 灏佽/鎵硅櫉(h脿o)
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si3407dv-t1-ge3璩囨枡 鏇村>

  • 鍨嬭櫉(h脿o)
  • 鎻忚堪
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si3407dv-t1-ge3鍙冩暩(sh霉)

  • 妯�(bi膩o)婧�(zh菙n)鍖呰3,000
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