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銆�銆�閫欐 MOSFET 甯哥敤浜� DC/DC 杞夋彌鍣�銆佽矤杓夐枊闂�銆侀浕姗熼﹨鍕曚互鍙婇浕淇″拰缍�(w菐ng)绲¤ō鍌欎腑鐨勫姛鐜囩鐞嗘噳鐢�銆�
鏈�澶ф紡婧愰浕澹擄細60V
銆�銆�鏈�澶ф煹婧愰浕澹擄細卤20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�52A
銆�銆�灏庨�氶浕闃伙紙Rds(on)锛夛細1.2m惟锛堝湪 Vgs=10V 鏅傦級
銆�銆�绺芥煹妤甸浕鑽凤細38nC
銆�銆�杓稿叆闆诲锛�2790pF
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55鈩� to +175鈩�
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銆�銆�Vishay 鍦ㄥ埗閫犻亷绋嬩腑娉ㄩ噸鐢�(ch菐n)鍝佺殑璩噺鍜屼竴鑷存��锛屽洜姝� SI4880DY-T1-GE3 鍦ㄦ壒閲忕敓鐢�(ch菐n)涓篃鑳戒繚鎸侀珮鎬ц兘琛ㄧ従(xi脿n)銆�
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銆�銆�鍦ㄥ伐妤�(y猫)鑷嫊鍖栭牁鍩�锛孲I4880DY-T1-GE3 鍙敤浣滈浕姗熼﹨鍕曢浕璺殑鏍稿績鍏冧欢锛屾敮鎸侀珮閫熷垏鎻涘拰绮剧⒑鎺у埗銆傚彟澶栵紝姹借粖闆诲瓙绯荤当(t菕ng)濡傞浕姹犵鐞嗙郴绲�(t菕ng)鍜岄浕鍕曞姪鍔涜綁鍚戠郴绲�(t菕ng)涔熷彲閲囩敤姝ゅ瀷铏熶互瀵︾従(xi脿n)鏇撮珮鐨勮兘婧愬埄鐢ㄧ巼銆�
SI4870DY, IRF7778PbF
