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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > SI4966DY-T1-E3

SI4966DY-T1-E3 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2025/6/9 9:03:08 鏌ョ湅 闁辫畝锛�2

SI4966DY-T1-E3 鏄竴娆剧敱 Vishay 鎻愪緵鐨� N 婧濋亾澧炲挤鍨� MOSFET锛岄噰鐢� TrenchFET? 绗笁浠ｆ妧琛�(sh霉)銆傝┎鍣ㄤ欢灏堢偤浣庡皫(d菐o)閫氶浕闃诲拰楂樻晥鐜囨噳(y墨ng)鐢ㄨō(sh猫)瑷�锛岄仼鍚堣姹備綆鎼嶈�楀拰楂樻�ц兘鐨勯浕璺�銆傚叾灏佽褰㈠紡鐐� PowerPAK? 1212-8锛屽叿鍌欏嚭鑹茬殑鐔辨�ц兘鍜岄浕姘ｆ�ц兘銆�

鍙冩暩(sh霉)

鏈�澶ф紡婧愰浕澹擄細60V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�25A
銆�銆�灏�(d菐o)閫氶浕闃伙紙Rds(on)锛夛細1.2m惟
銆�銆�鏌垫サ闆昏嵎锛�21nC
銆�銆�杓稿叆闆诲锛�1750pF
銆�銆�宸ヤ綔绲�(ji茅)婧寖鍦嶏細-55掳C 鑷� +175掳C
銆�銆�灏佽椤炲瀷锛歅owerPAK? 1212-8

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SI4966DY-T1-E3 閲囩敤浜嗗厛閫茬殑 TrenchFET 鎶�琛�(sh霉)锛屼娇鍏跺叿鍌欐サ浣庣殑灏�(d菐o)閫氶浕闃�锛屽緸鑰屾笡灏戝偝灏�(d菐o)鎼嶈�楀苟鎻愬崌鏁撮珨鏁堢巼銆�
銆�銆�瑭插櫒浠舵敮鎸侀珮閬� 25A 鐨勯�ｇ簩(x霉)婕忔サ闆绘祦锛岃兘澶犳豢瓒冲ぇ鍔熺巼鎳�(y墨ng)鐢ㄧ殑闇�姹�銆�
銆�銆�鐢变簬閲囩敤浜� PowerPAK 灏佽锛屽畠鍏锋湁杓冧綆鐨勭啽闃诲拰鍎�(y艒u)鐣扮殑鏁ｇ啽鑳藉姏锛岄潪甯搁仼鍚堝湪楂樻韩鐠�(hu谩n)澧冧笅宸ヤ綔銆�
銆�銆�姝ゅ锛屽叾蹇�熼枊闂�(gu膩n)鎬ц兘浣垮緱 SI4966DY-T1-E3 鍦ㄩ珮闋婚枊闂�(gu膩n)鎳�(y墨ng)鐢ㄤ腑琛ㄧ従(xi脿n)鍑鸿壊锛屼緥濡� DC-DC 杞�(zhu菐n)鎻涘櫒銆侀浕姗熼﹨(q奴)鍕曚互鍙婅矤杓夐枊闂�(gu膩n)绛夊牬鏅�銆�

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SI4966DY-T1-E3 寤ｆ硾鎳�(y墨ng)鐢ㄤ簬澶氱ó楂樻晥鑳介浕鍔涢浕瀛愮郴绲�(t菕ng)涓�锛屽寘鎷絾涓嶉檺浜庯細
銆�銆�1. 绛嗚鏈浕鑵﹀強鑷哄紡姗熼浕婧愰仼閰嶅櫒
銆�銆�2. 闁嬮棞(gu膩n)妯″紡闆绘簮 (SMPS)
銆�銆�3. ORing 浜屾サ绠℃浛浠ｆ柟妗�
銆�銆�4. 闆绘椹�(q奴)鍕曢浕璺�
銆�銆�5. 楂樻晥 DC-DC 杞�(zhu菐n)鎻涘櫒
銆�銆�6. 璨犺級鍒囨彌鍜屼繚璀烽浕璺�
銆�銆�鍏朵綆 Rds(on) 鍜岄珮闆绘祦铏曠悊鑳藉姏浣垮叾鎴愮偤閫欎簺鎳�(y墨ng)鐢ㄤ腑鐨勭悊鎯抽伕鎿�銆�

鏇夸唬鍨嬭櫉

SI4885DY, IRF7748PBF, FDP016N06L

si4966dy-t1-e3鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

  • 鐢�(ch菐n)鍝佸瀷铏�
  • 渚涙噳(y墨ng)鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

si4966dy-t1-e3璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

si4966dy-t1-e3鍙冩暩(sh霉)

  • 妯欐簴鍖呰2,500
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 闄ｅ垪
  • 绯诲垪TrenchFET®
  • FET 鍨�2 鍊� N 婧濋亾锛堥洐锛�
  • FET 鐗归粸閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)20V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C-
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C25 姣瓙 @ 7.1A锛�4.5V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級1.5V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs50nC @ 4.5V
  • 杓稿叆闆诲 (Ciss) @ Vds-
  • 鍔熺巼 - 鏈�澶�-
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-SOIC锛�0.154"锛�3.90mm 瀵級
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�8-SOICN
  • 鍖呰甯跺嵎 (TR)