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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > SI9407BDY-T1-GE3

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鍙冩暩(sh霉)

鏈�澶ф紡婧愰浕澹擄細30V
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銆�銆�灏佽褰㈠紡锛歍SOP6

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鏇夸唬鍨嬭櫉

SI9406DP-T1-GE3, SI9412DY-T1-GE3

si9407bdy-t1-ge3鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

  • 鐢�(ch菐n)鍝佸瀷铏�
  • 渚涙噳(y墨ng)鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

si9407bdy-t1-ge3鐢�(ch菐n)鍝�

si9407bdy-t1-ge3鍙冩暩(sh霉)

  • 妯欐簴鍖呰2,500
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪-
  • FET 鍨�MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)60V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C4.7A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C120 姣瓙 @ 3.2A锛�10V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級3V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs22nC @ 10V
  • 杓稿叆闆诲 (Ciss) @ Vds600pF @ 30V
  • 鍔熺巼 - 鏈�澶�5W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨8-SOIC锛�0.154"锛�3.90mm 瀵級
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�8-SOICN
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūSI9407BDY-T1-GE3TR