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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > STV160NF02LAT4

STV160NF02LAT4 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2024/9/12 13:38:16 鏌ョ湅 闁辫畝锛�305

STV160NF02LA浠ｈ〃绗簩浠ｆ噳(y墨ng)鐢ㄧ壒瀹歋TMicroelectronicswell寤虹珛鐨凷TripFET?宸ヨ棟鍩轰簬闈炲父鐛�(d煤)鐗圭殑姊濆付甯冨眬瑷�(sh猫)瑷�(j矛)銆傜祼(ji茅)鏋淢OSFET椤ず鍑虹劇鑸囧�瘮鐨勯珮灏佽瀵嗗害銆佽秴浣庡皫(d菐o)閫氶浕闃诲拰鍎�(y艒u)瓒婄殑闁嬮棞(gu膩n)鐗规��銆傚伐钘濈啊鍖栦篃杞�(zhu菐n)鍖栫偤鏀归��(j矛n)鐨勫埗閫犲啀鐝�(xi脿n)鎬с�傝┎瑁濈疆鐗瑰垾閬╃敤浜庢晥鐜囪嚦闂�(gu膩n)閲嶈鐨勫ぇ闆绘祦銆佷綆澹撻枊闂�(gu膩n)鎳�(y墨ng)鐢ㄣ��

鎶�琛�(sh霉)鍙冩暩(sh霉)

椤炲垾锛氬垎闆㈠紡鍗婂皫(d菐o)楂旂敘(ch菐n)鍝�
銆�銆�瀹跺涵锛歁OSFET锛孏aNFET-鍠�
銆�銆�绯诲垪锛歋TripFET™
銆�銆�FET鍨嬶細MOSFET N閫氶亾锛岄噾灞哀鍖栫墿
銆�銆�FET鐗归粸(di菐n)锛氶倧杓浕骞抽杸
銆�銆�闁嬫厠(t脿i)Rds锛堟渶澶э級 Id,Vgs 25鈩冿細2.7姣瓙 80A,10V
銆�銆�婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�20V
銆�銆�闆绘祦-閫ｇ簩(x霉)婕忔サ(Id) 25鈩冿細160A
銆�銆�Id鏅傜殑Vgs(th)锛堟渶澶э級锛�1V 250µA
銆�銆�闁橀浕鑽�(Qg) Vgs锛�175nC 10V
銆�銆�閫氶亾鏁�(sh霉)锛�
銆�銆�婕忔簮妤甸浕闃伙細1.8 m惟
銆�銆�妤垫�э細N-Channel
銆�銆�鑰楁暎鍔熺巼锛�210 W
銆�銆�婕忔簮妤甸浕澹�(Vds)锛�20 V
銆�銆�婕忔簮鎿婄┛闆诲锛�20 V
銆�銆�鏌垫簮鎿婄┛闆诲锛毬�15.0 V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(Ids)锛�160 A
銆�銆�涓婂崌鏅傞枔锛�650 ns
銆�銆�杓稿叆闆诲(Ciss)锛�5500pF 15V(Vds)
銆�銆�涓嬮檷鏅傞枔锛�200 ns
銆�銆�宸ヤ綔婧害(Max)锛�175鈩�
銆�銆�宸ヤ綔婧害(Min)锛�65鈩�
銆�銆�鑰楁暎鍔熺巼(Max)锛�210W(Tc)

灏佽鍙冩暩(sh霉)

闀峰害锛�7.6 mm
銆�銆�瀵害锛�9.5 mm
銆�銆�楂樺害锛�3.65 mm
銆�銆�瀹夎椤炲瀷锛氳〃闈㈣布瑁�
銆�銆�灏佽/澶栨锛歅owerSO-10
銆�銆�鍖呰锛氬付鍗�(TR)

鐗╃悊鍙冩暩(sh霉)

宸ヤ綔婧害锛�175鈩�(TJ)
銆�銆�鍔熺巼-鏈�澶э細210W

stv160nf02lat4鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

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stv160nf02lat4鍙冩暩(sh霉)

  • 妯�(bi膩o)婧�(zh菙n)鍖呰600
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪STripFET™
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  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)20V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C160A
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  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級1V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs175nC @ 10V
  • 杓稿叆闆诲 (Ciss) @ Vds5500pF @ 15V
  • 鍔熺巼 - 鏈�澶�210W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
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  • 鍖呰甯跺嵎 (TR)