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鎮ㄥソ锛屾杩庝締鍒扮董搴浕瀛愬競鍫寸恫(w菐ng) 鐧婚寗 | 鍏嶈不(f猫i)娉ㄥ唺

鎮ㄦ墍鍦ㄧ殑浣嶇疆锛�闆诲瓙鍏冨櫒浠堕噰璩肩恫(w菐ng) > IC鐧剧 > SUM55P06-19L-E3

SUM55P06-19L-E3 鐧�(f膩)甯冩檪闁� 鏅傞枔锛�2022/10/12 11:31:52 鏌ョ湅 闁辫畝锛�1083

    VISHAY  SUM55P06-19L-E3  鍫存晥鎳�(y墨ng)绠�, MOSFET, P閫氶亾, -60V, 0.015惟, -55A

    The SUM55P06-19L-E3 is a -60V P-channel TrenchFET? Power MOSFET.


姒傝堪

    VISHAY  SUM55P06-19L-E3  鍫存晥鎳�(y墨ng)绠�, MOSFET, P閫氶亾, -60V, 0.015惟, -55A

    The SUM55P06-19L-E3 is a -60V P-channel TrenchFET? Power MOSFET.


鍙冩暩(sh霉)

    椤嶅畾鍔熺巼锛�3.75 W

    閲濊叧鏁�(sh霉)锛�

    婕忔簮妤甸浕闃伙細0.015 惟

    妤垫�э細P-Channel

    鑰楁暎鍔熺巼锛�125 W

    婕忔簮妤甸浕澹�(Vds)锛�-60.0 V

    閫ｇ簩(x霉)婕忔サ闆绘祦(Ids)锛�-5.50 A

    涓婂崌鏅傞枔锛�15 ns

    杓稿叆闆诲(Ciss)锛�3500pF @25V(Vds)

    涓嬮檷鏅傞枔锛�230 ns

    宸ヤ綔婧害(Max)锛�175 鈩�

    宸ヤ綔婧害(Min)锛�-55 鈩�

    鑰楁暎鍔熺巼(Max)锛�3.75 W

    瀹夎鏂瑰紡锛歋urface Mount

    寮曡叧鏁�(sh霉)锛�

    闀峰害锛�10.41 mm

    瀵害锛�9.65 mm

    楂樺害锛�4.83 mm

    灏佽锛歍O-263-3

    宸ヤ綔婧害锛�-55鈩� ~ 175鈩�


sum55p06-19l-e3鎺ㄨ枽渚涙噳(y墨ng)鍟� 鏇村>

  • 鐢�(ch菐n)鍝佸瀷铏�
  • 渚涙噳(y墨ng)鍟�
  • 鏁�(sh霉)閲�
  • 寤犲晢
  • 灏佽/鎵硅櫉
  • 瑭㈠児

sum55p06-19l-e3璩囨枡 鏇村>

  • 鍨嬭櫉
  • 鎻忚堪
  • 鍝佺墝
  • 闁辫涓嬭級

sum55p06-19l-e3鍙冩暩(sh霉)

  • 鏁�(sh霉)鎿�(j霉)鍒楄〃SUM55P06-19L
  • 妯�(bi膩o)婧�(zh菙n)鍖呰800
  • 椤炲垾鍒嗛洟寮忓崐灏�(d菐o)楂旂敘(ch菐n)鍝�
  • 瀹跺涵FET - 鍠�
  • 绯诲垪TrenchFET®
  • FET 鍨�MOSFET P 閫氶亾锛岄噾灞哀鍖栫墿
  • FET 鐗归粸(di菐n)閭忚集闆诲钩闁�
  • 婕忔サ鑷虫簮妤甸浕澹�(Vdss)60V
  • 闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25° C55A
  • 闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25° C19 姣瓙 @ 30A锛�10V
  • Id 鏅傜殑 Vgs(th)锛堟渶澶э級3V @ 250µA
  • 闁橀浕鑽�(Qg) @ Vgs115nC @ 10V
  • 杓稿叆闆诲 (Ciss) @ Vds3500pF @ 25V
  • 鍔熺巼 - 鏈�澶�3.75W
  • 瀹夎椤炲瀷琛ㄩ潰璨艰
  • 灏佽/澶栨TO-263-3锛孌²Pak锛�2 寮曠窔+鎺ョ墖锛�锛孴O-263AB
  • 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�TO-263锛圖2Pak锛�
  • 鍖呰甯跺嵎 (TR)
  • 鍏跺畠鍚嶇ūSUM55P06-19L-E3-NDSUM55P06-19L-E3TR