鍨嬭櫉(h脿o)锛欳GA2B2C0G1H060D050BD
銆�銆�椤炲瀷锛歂-Channel Power MOSFET
銆�銆�鏈�澶ф紡婧愰浕澹�(VDS)锛�60V
銆�銆�鏈�澶ф煹婧愰浕澹�(VGS)锛毬�20V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦(ID)锛�50A
銆�銆�灏�(d菐o)閫氶浕闃�(RDS(on))锛�4m惟锛堝吀鍨嬪�硷紝@ VGS=10V锛�
銆�銆�鏌垫サ闆昏嵎(Qg)锛�85nC
銆�銆�绺界啽闃�(胃JA)锛�45鈩�/W
銆�銆�宸ヤ綔婧�搴﹁寖鍦嶏��-55鈩� 鑷� +175鈩�

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瑭插姛鐜� MOSFET 寤ｆ硾鎳�(y墨ng)鐢ㄤ簬鍚勭ó宸ユキ(y猫)鍜屾秷璨�(f猫i)椤為浕瀛愮敘(ch菐n)鍝佷腑锛屼緥濡傦細
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CGA2B2C0G1H060D050BE, IRF540N, FDP5570N