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SI7884BDP-T1-GE3 鏄竴娆剧敱 Vishay 鐢熺敘鐨� N 婧濋亾澧炲挤鍨嬪姛鐜� MOSFET锛岄噰鐢� TrenchFET 绗笁浠ｆ妧琛�銆傝┎鍣ㄤ欢鍏锋湁妤典綆鐨勫皫閫氶浕闃诲拰鍎�(y艒u)鍖栫殑闁嬮棞鎬ц兘锛岄仼鐢ㄤ簬楂樻晥鐜�銆侀珮瀵嗗害鐨勯浕婧愯綁鎻涙噳鐢�銆傚叾灏佽褰㈠紡鐐哄皬澶栧舰鏅堕珨绠� SOT-23 灏佽锛岄仼鍚堜簬绌洪枔鍙楅檺鐨勮ō瑷堝牬鏅�銆�
銆�銆�閫欐 MOSFET 鐨勯瀹氶浕澹撶偤 60V锛岃兘澶犳豢瓒冲绋腑浣庡鎳夌敤鍫存櫙鐨勯渶姹�锛屽 DC-DC 杞夋彌鍣ㄣ�佽矤杓夐枊闂�銆佸悓姝ユ暣娴佷互鍙婇浕姹犱緵闆昏ō鍌欑瓑銆�
鏈�澶ф紡婧愰浕澹擄細60V
銆�銆�閫ｇ簩(x霉)婕忔サ闆绘祦锛�4.5A
銆�銆�灏庨�氶浕闃伙紙Rds(on)锛夛細8.5m惟锛堝吀鍨嬪��锛屽湪 Vgs=10V 鏅傦級
銆�銆�鏌垫サ闆昏嵎锛�3.9nC锛堝吀鍨嬪�硷級
銆�銆�绺介浕瀹癸紙Ciss锛夛細115pF锛堝吀鍨嬪�硷級
銆�銆�宸ヤ綔绲愭韩鑼冨湇锛�-55掳C 鑷� +150掳C
銆�銆�灏佽褰㈠紡锛歋OT-23
SI7884BDP-T1-GE3 鍏锋湁浠ヤ笅涓昏鐗规�э細
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銆�銆�5. 绗﹀悎 RoHS 妯欐簴锛岀挵(hu谩n)淇濅笖鐒￠沟绱�銆�
銆�銆�6. 鏀寔瀵寖鍦嶇殑宸ヤ綔婧害锛岄仼鎳夋儭鍔ｇ挵(hu谩n)澧冧笅鐨勬噳鐢ㄩ渶姹�銆�
瑭� MOSFET 寤ｆ硾鎳夌敤浜庝互涓嬮牁鍩燂細
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銆�銆�2. 鍚屾鏁存祦鎷撴挷涓殑鍔熺巼绱氬厓浠�銆�
銆�銆�3. DC-DC 杞夋彌鍣ㄥ強 POL锛圥oint of Load锛夎綁鎻涘櫒銆�
銆�銆�4. 宸ユキ(y猫)鎺у埗鍜屾秷璨婚浕瀛愪腑鐨勯浕姹犵鐞嗙郴绲�(t菕ng)銆�
銆�銆�5. LED 椹呭嫊鍣ㄥ拰鍏朵粬浣庡闁嬮棞鎳夌敤銆�
銆�銆�6. 鍚勭ó闇�瑕侀珮鏁堣兘鑸囧皬鍨嬪寲瑷▓鐨勫牬鍚�銆�
SI4446DY-T1-GE3, SI4447DY-T1-GE3, BSS138
