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SI9956DY-T1-GE3 鏄竴娆剧敱 Vishay 鎻愪緵鐨� N 婧濋亾澧炲挤鍨� MOSFET锛堥噾灞哀鍖栫墿鍗婂皫楂斿牬鏁堟噳鏅堕珨绠★級銆傝┎鍣ㄤ欢閲囩敤 TrenchFET 绗笁浠ｆ妧琛�锛屽叿鏈夋サ浣庣殑灏庨�氶浕闃诲拰楂樻晥鐜囷紝閬╃敤浜庨珮闋婚枊闂滄噳鐢�銆傚叾灏佽褰㈠紡鐐� PowerPAK SO-8锛岄仼鍚堣〃闈㈣布瑁濆伐钘濄��
銆�銆�閫欐 MOSFET 寤ｆ硾鐢ㄤ簬 DC/DC 杞�(zhu菐n)鎻涘櫒銆佽矤杓夐枊闂�銆佸悓姝ユ暣娴併�侀浕姗熼﹨(q奴)鍕曚互鍙婁究鏀滃紡闆诲瓙瑷倷涓殑鍔熺巼绠＄悊闆昏矾銆�
鍨嬭櫉锛歋I9956DY-T1-GE3
銆�銆�椤炲瀷锛歂 婧濋亾 MOSFET
銆�銆�Vds锛堟紡婧愰浕澹擄級锛�60V
銆�銆�Rds(on)锛堝皫閫氶浕闃�锛屽吀鍨嬪�硷級锛�2.5m惟
銆�銆�Id锛堥�ｇ簩(x霉)婕忛浕娴侊級锛�47A
銆�銆�Vgs(th)锛堟煹妤甸枊鍟熼浕澹擄級锛�1.3V 鑷� 2.5V
銆�銆�Qg锛堟煹妤甸浕鑽凤級锛�15nC
銆�銆�fsw锛堟渶澶ч枊闂滈牷鐜囷級锛�2MHz
銆�銆�灏佽锛歅owerPAK SO-8
銆�銆�宸ヤ綔婧害鑼冨湇锛�-55鈩� 鑷� +175鈩�
SI9956DY-T1-GE3 鐨勪富瑕佺壒鎬у寘鎷細
銆�銆�1. 妤典綆鐨勫皫閫氶浕闃伙紙Rds(on)锛�锛岃兘澶犻’钁楅檷浣庡偝灏庢悕鑰�锛屾彁鍗囩郴绲�(t菕ng)鏁堢巼銆�
銆�銆�2. 楂樻晥鐜囪ō瑷堜娇鍏堕潪甯搁仼鍚堥珮闋婚枊闂滄噳鐢�锛屽鍚屾鏁存祦鍜� DC/DC 杞�(zhu菐n)鎻涘櫒銆�
銆�銆�3. TrenchFET 绗笁浠ｆ妧琛撴彁楂樹簡鍔熺巼瀵嗗害骞堕檷浣庝簡绺藉姛鑰�銆�
銆�銆�4. 灏忓阀鐨� PowerPAK SO-8 灏佽绡�(ji茅)鐪佷簡 PCB 绌洪枔锛屽苟鎻愪緵浜嗚壇濂界殑鐔辨�ц兘銆�
銆�銆�5. 鏀寔瀵寖鍦嶇殑宸ヤ綔婧害锛岄仼鎳夊绋伐妤�(y猫)鍙婃秷璨婚鐠�(hu谩n)澧冦��
瑭� MOSFET 涓昏鎳夌敤浜庝互涓嬮牁鍩燂細
銆�銆�1. 绛嗚鏈浕鑵﹀拰鑷哄紡姗熶腑鐨� DC/DC 杞�(zhu菐n)鎻涘櫒銆�
銆�銆�2. 鍚勭ó椤炲瀷鐨勮矤杓夐枊闂溿��
銆�銆�3. 鍚屾鏁存祦闆昏矾銆�
銆�銆�4. 闆绘椹�(q奴)鍕曟帶鍒躲��
銆�銆�5. 娑堣不椤為浕瀛愮敘(ch菐n)鍝佷腑鐨勯浕姹犵鐞嗘ā濉�銆�
銆�銆�6. 宸ユキ(y猫)鑷嫊鍖栬ō鍌欎腑鐨勯浕婧愮鐞嗗柈鍏�銆�
SIH995DH, SI4482DY
