鏅傞枔锛�2023/4/13 11:22:53
闁辫畝锛�588
椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘(ch菐n)鍝�
瀹跺涵锛歁OSFETs - 闄ｅ垪
椤炲垾锛氬垎闆㈠紡鍗婂皫楂旂敘(ch菐n)鍝�
瀹跺涵锛歁OSFETs - 闄ｅ垪
FET 鍨嬶細2 鍊� N 婧濋亾锛堥洐锛�
FET 鐗归粸锛氶倧杓浕骞抽杸
闁嬫厠(t脿i)Rds锛堟渶澶э級@ Id, Vgs @ 25掳 C锛�1.6 姝愬 @ 500mA, 10V
婕忔サ鑷虫簮妤甸浕澹�(Vdss)锛�60V
闆绘祦 - 閫ｇ簩(x霉)婕忔サ(Id) @ 25掳 C锛�294mA
Id 鏅傜殑 Vgs(th)锛堟渶澶э級锛�2.5V @ 250?A
闁橀浕鑽�(Qg) @ Vgs锛�0.7nC @ 4.5V
鍦� Vds 鏅傜殑杓稿叆闆诲(Ciss) 锛�24.5pF @ 20V
鍔熺巼 - 鏈�澶э細250mW
瀹夎椤炲瀷锛氳〃闈㈣布瑁�
灏佽/澶栨锛歋OT-563, SOT-6
鍖呰锛氬付鍗� (TR)
渚涙噳鍟嗚ō鍌欏皝瑁濓細SOT-563
| 寤犲晢 |
|---|
| ON Semiconductor |
